• DocumentCode
    913678
  • Title

    Silicon p-n junction photodiode characteristics with variable drift field in the diffused region

  • Author

    Bhattacharyya, A.B. ; Tagore, A.K. ; Basavaraj, T.N.

  • Author_Institution
    Indian Institute of Technology, Department of Physics, New Delhi, India
  • Volume
    7
  • Issue
    9
  • fYear
    1971
  • Firstpage
    231
  • Lastpage
    233
  • Abstract
    The continuity equation for the minority carriers, considering the actual field variation in the diffused region of a photodiode with a complementary-error-function impurity distribution, has been solved in terms of a power series. The essential parameters, such as excess minority-carrier profile, short-circuit current, surface loss and collection efficiency have been calculated.
  • Keywords
    p-n junctions; photodiodes; collection efficiency; diffused region; excess minority carrier profile; impurity distribution; short circuit current; silicon p-n junction photodiode; surface loss; variable drift field;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19710156
  • Filename
    4235239
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=913678