Title :
Analytical model for p--n junctions under high-injection conditions
Author_Institution :
Brown Boveri Research Centre, Baden, Switzerland
Abstract :
An analytical approximation for space-charge layers at abrupt p--n junctions under high-injection conditions is presented. In this approximation, an exponential decay of the charge on both sides of the junction is assumed. Predictions from this model are found to be in good agreement with the results of exact numerical solutions.
Keywords :
p-n junctions; semiconductor device models; space charge; p n junctions; reverse bias conditions; semiconductor device models; space charge; thyristor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710344
