High-power 2.0 mu m InGaAsP laser diodes

Author

Major, J.S., Jr. ; Nam, D.W. ; Osinski, J.S. ; Welch, D.F.

Author_Institution

Spectra Diode Lab., San Jose, CA, USA

Volume

5

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

594

Lastpage

596

Abstract

Data detailing the performance of strained-layer InGaAs/InGaAsP double-quantum-well laser diodes operating at 2.0 mu m are presented. The total external efficiency and maximum power achieved are 55% and 1.6-W continuous wave (CW), respectively, from a 200- mu m gain-guided laser diode. Measurements on gain-guided broad area devices yield an internal efficiency of 0.73 with a distributed loss coefficient, alpha , of 7.5 cm/sup -1/. The measured threshold current density is 300 A/cm/sup 2/ for a 2-mm-long broad area device operated CW at 25 degrees C.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser beams; semiconductor lasers; 2 micron; 2 mm; 200 micron; 25 degC; InGaAs-InGaAsP; distributed loss coefficient; double-quantum-well laser diodes; external efficiency; gain-guided broad area devices; gain-guided laser diode; internal efficiency; maximum power; semiconductors; strained-layer laser; threshold current density; Area measurement; Diode lasers; Indium gallium arsenide; Indium phosphide; Laser excitation; Optical materials; Pump lasers; Semiconductor diodes; Solid lasers; Substrates;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.219679

Filename

219679