• DocumentCode
    913752
  • Title

    Experiments on heat sinking of semiconductor devices

  • Author

    Fallmann, W. ; Hartnagel, H.L. ; Mathur, P.C.

  • Author_Institution
    University of Newcastle upon Tyne, Department of Electrical & Electronic Engineering, Newcastle upon Tyne, UK
  • Volume
    7
  • Issue
    18
  • fYear
    1971
  • Firstpage
    512
  • Lastpage
    513
  • Abstract
    A planar GaAs structure has been used to measure the properties of good heatsinks of c.w. devices. It is found, first, that the thermal resistance is primarily given by the thermal conductivity k of GaAs if the temperature dependence of k is included, and, secondly, that the contribution of the semiconductor-metal interface is negligible.
  • Keywords
    heat sinks; resistance (electric); semiconductor devices; conductivity; heatsinks; planar GaAs structure; semiconductor devices; semiconductor metal interfaces; thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19710347
  • Filename
    4235247
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=913752