DocumentCode
913759
Title
Proposal of novel gain-levered MQW DFB laser with high and red-shifted FM response
Author
Olesen, Henning ; Shim, Jong-In ; Yamaguchi, Masayuki ; Kitamura, Mitsuhiro
Author_Institution
NEC Corp., Tsukuba, Japan
Volume
5
Issue
6
fYear
1993
fDate
6/1/1993 12:00:00 AM
Firstpage
599
Lastpage
602
Abstract
A gain-levered multiple quantum well (MQW) distributed feedback (DFB) laser with high FM efficiency is discussed. The device consists of three sections with different bandgap energy. It can be fabricated by a selective area metalorganic vapor phase epitaxy (MOVPE) growth technique. Numerical analysis shows that a flat, red-shifted, and high FM efficiency of above 1 GHz/mA at 20-mW output power can be realized using the gain levering scheme.<>
Keywords
chemical vapour deposition; distributed feedback lasers; optical workshop techniques; semiconductor lasers; vapour phase epitaxial growth; 20 mW; bandgap energy; fabrication; gain levering scheme; gain-levered MQW DFB laser; performance; red-shifted FM response; selective area metalorganic vapor phase epitaxy; semiconductor lasers; Distributed feedback devices; Epitaxial growth; Epitaxial layers; Laser feedback; Numerical analysis; Photonic band gap; Power generation; Proposals; Quantum well devices; Quantum well lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.219681
Filename
219681
Link To Document