Title :
A DBR laser employing passive-section heaters, with 10.8 nm tuning range and 1.6 MHz linewidth
Author :
Kameda, T. ; Mori, H. ; Onuki, S. ; Kikugawa, T. ; Takahashi, Y. ; Tsuchiya, F. ; Nagai, H.
Author_Institution :
Anritsu Corp., Kanagawa, Japan
fDate :
6/1/1993 12:00:00 AM
Abstract :
A wavelength-tunable, three-section, distributed Bragg reflector (DBR) InGaAsP/InP laser diode is described. The refractive indices of the DBR section and the phase-control section are thermally controlled by thin-film heaters embedded on these passive sections. This structure enables wide-range wavelength tuning without the spectral linewidth broadening accompanying conventional tuning by current injection into the passive sections. A tuning range of 10.8 nm and a linewidth of less than 1.6 MHz have been achieved in the 1.5- mu m wavelength region. The temperature increase in the active layer is held to within a few degrees, even when the DBR-section temperature reaches 90 degrees C.<>
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser tuning; optical workshop techniques; refractive index; semiconductor lasers; 1.5 micron; 1.6 MHz; 10.8 nm; DBR laser; InGaAsP-InP; active layer; current injection; distributed Bragg reflector laser diode; fabrication; passive-section heaters; phase-control section; refractive indices; semiconductor; thin-film heaters; wavelength tunable laser; wavelength tuning; Diode lasers; Distributed Bragg reflectors; Gold; Laser noise; Laser tuning; Optical devices; Optical refraction; Plasma temperature; Temperature control; Transistors;
Journal_Title :
Photonics Technology Letters, IEEE
