DocumentCode :
913810
Title :
Wavelength tuning mechanism in three-electrode DFB lasers
Author :
Tohyama, Masaki ; Onomura, Masaaki ; Funemizu, Masahisa ; Suzuki, Nobuo
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Volume :
5
Issue :
6
fYear :
1993
fDate :
6/1/1993 12:00:00 AM
Firstpage :
616
Lastpage :
618
Abstract :
The wavelength tuning mechanism is investigated for three-electrode distributed feedback (DFB) InGaAs-InGaAsP lasers. It is shown that the side and center sections play different roles in wavelength tuning: the former determines the effective Bragg wavelength and the latter contributes through the round-trip phase condition. The lasing wavelength is expressed in a simple form that renders the wavelength shift behavior exceedingly understandable. The indispensability of the thermal contribution to continuous broad range tuning is also clarified both theoretically and experimentally.<>
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser tuning; semiconductor lasers; InGaAs-InGaAsP; continuous broad range tuning; distributed feedback lasers; effective Bragg wavelength; lasing wavelength; round-trip phase condition; semiconductor; thermal contribution; three-electrode DFB lasers; wavelength shift behavior; wavelength tuning; wavelength tuning mechanism; Charge carrier density; Electrodes; Equations; Indium gallium arsenide; Laser modes; Laser theory; Laser tuning; Optical tuning; Plasma temperature; Refractive index;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.219687
Filename :
219687
Link To Document :
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