Narrow linewidth characteristic of a 1.5 mu m wavelength single-mode phase-locked laser array

Author

Dong, Jie ; Arai, Shigehisa ; Kudo, Koji ; Hotta, Masatsugu

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan

Volume

5

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

622

Lastpage

624

Abstract

The linewidth of a 1.5- mu m wavelength single-mode phase-locked laser array was measured. A relatively narrow linewidth of 203 kHz was obtained at an output power of 25 mW for a five-element phase-locked laser array that consists of a five-pair Ga/sub 0.3/In/sub 0.7/As/GaInAsP/InP compressively strained quantum-well active region and a mode controlling grating filter. This result indicates the reduced spontaneous emission factor due to a larger cavity size in the lateral direction.<>

Keywords

III-V semiconductors; diffraction gratings; gallium arsenide; indium compounds; laser beams; laser cavity resonators; laser mode locking; semiconductor laser arrays; 1.5 micron; 203 kHz; 25 mW; Ga/sub 0.3/In/sub 0.7/As-GaInAsP-InP; cavity size; compressively strained quantum-well active region; linewidth; mode controlling grating filter; semiconductor; single-mode phase-locked laser array; spontaneous emission factor; Indium phosphide; Laser modes; Optical arrays; Phase measurement; Phased arrays; Power generation; Power lasers; Quantum well lasers; Strain control; Wavelength measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.219689

Filename

219689