DocumentCode :
913840
Title :
Millimeter-Wave Semiconductor Devices
Author :
Kramer, N.B.
Volume :
24
Issue :
11
fYear :
1976
fDate :
11/1/1976 12:00:00 AM
Firstpage :
685
Lastpage :
693
Abstract :
Special techniques used in the construction of various types of millimeter-wave diodes are presented. The performance of millimeter Gunn and IMPATT devices is reviewed and other factors influencing the application of these diodes are discussed. The performance and characteristics of small-area diodes used for millimeter-wave modulation, mixing, and detection are also reviewed. Several shortcomings in the present design and application of millimeter diodes are pointed out with suggestions for further work.
Keywords :
Circuits; Inductance; Joining processes; Lead; Millimeter wave devices; Millimeter wave technology; P-i-n diodes; Semiconductor device packaging; Semiconductor devices; Semiconductor diodes;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1976.1128945
Filename :
1128945
Link To Document :
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