DocumentCode
913840
Title
Millimeter-Wave Semiconductor Devices
Author
Kramer, N.B.
Volume
24
Issue
11
fYear
1976
fDate
11/1/1976 12:00:00 AM
Firstpage
685
Lastpage
693
Abstract
Special techniques used in the construction of various types of millimeter-wave diodes are presented. The performance of millimeter Gunn and IMPATT devices is reviewed and other factors influencing the application of these diodes are discussed. The performance and characteristics of small-area diodes used for millimeter-wave modulation, mixing, and detection are also reviewed. Several shortcomings in the present design and application of millimeter diodes are pointed out with suggestions for further work.
Keywords
Circuits; Inductance; Joining processes; Lead; Millimeter wave devices; Millimeter wave technology; P-i-n diodes; Semiconductor device packaging; Semiconductor devices; Semiconductor diodes;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1976.1128945
Filename
1128945
Link To Document