• DocumentCode
    913877
  • Title

    Measurement of the velocity/field characteristic of GaAs sample in dipole-mode operation

  • Author

    Pokorny, J. ; Jel¿¿nek, F.

  • Author_Institution
    Czechoslovak Academy of Sciences, Institue of Radio Engineering & Electronics, Praha, Czechoslovakia
  • Volume
    7
  • Issue
    18
  • fYear
    1971
  • Firstpage
    528
  • Lastpage
    529
  • Abstract
    A new technique of determination of the velocity/field characteristic of GaAs sample while a domain is in transit is proposed. The v(E) characteristic above threshold is approximated to by a convenient analytical expression containing unknown coefficients that are calculated by a computer using the measured current/voltage characteristic or capacitive probe measurements.
  • Keywords
    III-V semiconductors; electron mobility; gallium arsenide; semiconductor materials; GaAs; capacitive probe measurements; current/voltage characteristics; electron diffusion; electron mobility; semiconductor materials; velocity/field characteristic;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19710358
  • Filename
    4235258