Title :
A high-efficiency vertical-cavity surface-emitting switching laser fabricated with post-growth cavity mode positioning
Author :
Evaldsson, P.A. ; Taylor, G.W. ; Cooke, P.W. ; Sargood, S.K. ; Kiely, P.A. ; Docter, D.P.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
fDate :
6/1/1993 12:00:00 AM
Abstract :
The first room-temperature continuous-wave (CW) operation of the double heterostructure optoelectronic switching laser implemented as a vertical-cavity laser is described. A deposited dielectric top reflector of SiO/sub 2//TiO/sub 2/ allowed the use of a cavity etch back technique after the sample was grown, to position the cavity mode at the desired wavelength. Room temperature CW threshold currents as low as 4.8 mA for a 14- mu m-diameter device were obtained with slope efficiencies of 0.45 mW/mA. The maximum CW output power was 2.5 mW and the resistivity was 4*10/sup -4/ Omega cm/sup 2/.<>
Keywords :
integrated optoelectronics; laser cavity resonators; laser modes; optical switches; optical workshop techniques; semiconductor lasers; 14 micron; 2.5 mW; 4.8 mA; CW operation; SiO/sub 2/-TiO/sub 2/; cavity etch back technique; cavity mode; deposited dielectric top reflector; double heterostructure optoelectronic switching laser; high-efficiency vertical-cavity surface-emitting switching laser; post-growth cavity mode positioning; room-temperature; threshold currents; vertical-cavity laser; Dielectrics; Etching; Laser modes; Mirrors; Optical computing; Optical surface waves; Reflectivity; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
