Reduction of damping in high-speed semiconductor lasers

Author

Wang, Gary ; Nagarajan, Radhakrishnan ; Tauber, Dan ; Bowers, John

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

5

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

642

Lastpage

645

Abstract

An analytical expression for the intrinsic gain suppression factor based on carrier heating is derived. The theory shows good agreement with the published experimental value of in =+1.5*10/sup -17/ cm/sup 3/ for in-plane lasers. For the first time, a negative gain suppression factor for particular laser designs is predicted and experimentally observed. A negative gain suppression factor can lead to the elimination of damping in semiconductor lasers. Using vertical-cavity surface-emitting lasers, a negative gain suppression factor of -2.2*10/sup -17/ cm/sup 3/ is observed.<>

Keywords

damping; high-speed optical techniques; laser cavity resonators; semiconductor lasers; carrier heating; damping; high-speed semiconductor lasers; in-plane lasers; intrinsic gain suppression factor; vertical-cavity surface-emitting lasers; Damping; Distributed feedback devices; Electrons; Laser mode locking; Laser theory; Optical pulses; Pulse amplifiers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.219696

Filename

219696