DocumentCode
913926
Title
High-Power 50-GHz Double-Drift-Region IMPATT Oscillators with Improved Bias Circuits for Eliminating Low-Frequency Instabilities
Author
Hirachi, Yasutake ; Nakagami, Takakiyo ; Toyama, Yoshikazu ; Fukukawa, Yukio
Volume
24
Issue
11
fYear
1976
fDate
11/1/1976 12:00:00 AM
Firstpage
731
Lastpage
737
Abstract
Low-frequency instabilities in millimeter-wave double-drift-region (DDR) IMPATT diodes are investigated and new oscillator circuits with the improved bias circuits for eliminating the low-frequency instability are developed. DDR IMPATT diodes mounted in these circuits exhibited a maximum free-running oscillation power of 1.6 W at 55.5 GHz with 11.5-percent conversion efficiency. A highly stabilized oscillator was also constructed with the maximum output power of 1 W and the frequency stabflity 0.3 ppm/mA at 51.86 GHz.
Keywords
Diodes; Helium; Impedance; Ionization; Low-frequency noise; Oscillators; Power generation; Radio frequency; Solid state circuits; Voltage;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1976.1128953
Filename
1128953
Link To Document