• DocumentCode
    913934
  • Title

    The optical second-harmonic generation from porous silicon

  • Author

    Lo, Kuang-Yao ; Lue, Juh Tzeng

  • Author_Institution
    Nat. Tsing Hua Univ., Hsin Chu, Taiwan
  • Volume
    5
  • Issue
    6
  • fYear
    1993
  • fDate
    6/1/1993 12:00:00 AM
  • Firstpage
    651
  • Lastpage
    653
  • Abstract
    Second-harmonic generation from porous silicon with a magnitude of two orders greater than that from the original silicon crystalline wafers is discussed. The measured effective second-order nonlinear susceptibility X/sup (2)//sub ps.eff/ for a p-type porous silicon is 1.96*10/sup -7/ esu. The susceptibility is estimated on the base of a bulk property rather than on quantum confinement owing to its large surface to volume ratio.<>
  • Keywords
    elemental semiconductors; nonlinear optical susceptibility; optical harmonic generation; porous materials; silicon; Si; effective second-order nonlinear susceptibility; optical second-harmonic generation; p-Si; semiconductor; Bonding; Chemicals; Crystallization; Dielectric constant; Nonlinear optics; Optical harmonic generation; Optical sensors; Optical surface waves; Probes; Silicon;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.219699
  • Filename
    219699