The inversion channel resonant-cavity enhanced photodetector for two-dimensional optoelectronic array applications

Author

Daryanani, S.L. ; Taylor, G.W. ; Sargood, S.K. ; Vang, T. ; Tell, B.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

5

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

677

Lastpage

679

Abstract

The operation of the inversion-channel resonant-cavity enhanced (RCE) photodetector in a configuration compatible with the vertical-cavity surface-emitting laser (VCSEL) is discussed. The phototransistor uses three strained InGaAs/GaAs quantum wells as the absorbing region and a post-growth dielectric top stack. A quantum efficiency of 41% was obtained at the resonant wavelength of 0.94 mu m, thereby giving a resonant-enhancement factor of 13.5. A bipolar transistor gain of 6.8 at a current density of 10 A/cm/sup 2/ allowed the phototransistor responsivity to reach 2.1 A/W at the resonant wavelength.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical resonators; photodetectors; phototransistors; 0.94 micron; 2D; 41 percent; FEIC; IR; InGaAs-GaAs; SQW; VCSEL; absorbing region; bipolar transistor gain; current density; field effect integrated circuits; inversion channel; optoelectronic array applications; phototransistor; phototransistor responsivity; post-growth dielectric top stack; quantum efficiency; resonant wavelength; resonant-cavity enhanced photodetector; resonant-enhancement factor; semiconductors; strained quantum wells; vertical-cavity surface-emitting laser; Bipolar transistors; Dielectrics; Gallium arsenide; Indium gallium arsenide; Photodetectors; Phototransistors; Quantum well lasers; Resonance; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.219708

Filename

219708