Absence of 1/f noise in m.o.s. transistors operated in saturation

Noise measurements on p channel m.o.s.f.e.t.s in the 15 Hz¿50 kHz range revealed the absence of a 1/f term in the noise spectrum which may be described by the expression Req(¿) = A + B ¿/1+(¿¿)2 where A, B and ¿ are constants. Using charge-pumping measurements, the effective density of recombination centres was found to be 2.5 × 109 cm¿2 (eV)¿1.