Title :
Correlational Study Between SiN Etch Rate and Plasma Impedance in Electron Cyclotron Resonance Plasma Etcher for Advanced Process Control
Author :
Ohmori, Takeshi ; Kashibe, Makoto ; Une, Satoshi ; Yamamoto, Koichi ; Shiraishi, Daisuke ; Inoue, Satomi
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
The correlation between the change in the etching rate of SiN and the change in the monitored plasma impedance was investigated to estimate the capability of critical dimension (CD) prediction with a plasma impedance monitor (PIM). The results obtained with the PIM were compared with those of optical emission spectroscopy (OES), which was performed using the emission intensity ratio of C2/H, and showed that the SiN etching rate is strongly correlated with several values obtained with the PIM. We conclude that the PIM has the potential to predict CDs with the same accuracy as that of OES.
Keywords :
cyclotrons; process control; semiconductor device manufacture; silicon compounds; sputter etching; CD prediction; OES; PIM; SiN; advanced process control; critical dimension prediction; electron cyclotron resonance plasma etcher; monitored plasma impedance; optical emission spectroscopy; plasma impedance; plasma impedance monitor; Correlation; Erbium; Etching; Harmonic analysis; Plasmas; Silicon compounds; Sulfur hexafluoride; Plasma etching; advanced process control (APC); harmonics analysis of bias waveform; optical emission spectroscopy (OES); plasma impedance monitor (PIM);
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2015.2455051
