Title :
Low-voltage-tunable distributed Bragg reflector using InGaAs/GaAs quantum wells
Author :
Blum, O. ; Zucker, J.E. ; Wu, X. ; Gulden, K.H. ; Sohn, H. ; Gustafson, T.K. ; Smith, J.S.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
6/1/1993 12:00:00 AM
Abstract :
The operation of the first multiple quantum well (MQW) voltage-tunable distributed Bragg reflector (DBR) with inter-digitated contacts is discussed. Application of only +1 V produces a 12% change in reflectivity, demonstrating the advantages of the interdigitated contact scheme. Qualitative features of the optical response are successfully modeled using the transmission matrix method and absorption and refractive index spectra deduced from transmission measurements of a InGaAs/GaAs quantum-well control sample.<>
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; integrated optics; mirrors; reflectivity; tuning; DBR; DBR lasers; InGaAs-GaAs; SQW; absorption spectra; distributed Bragg reflector; inter-digitated contacts; multiple quantum well; optical response; reflectivity; refractive index spectra; semiconductor quantum wells; transmission matrix method; voltage-tunable; Absorption; Distributed Bragg reflectors; Gallium arsenide; Indium gallium arsenide; Optical refraction; Optical variables control; Quantum well devices; Reflectivity; Refractive index; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
