Title :
Demonstration of a waveguide lens monolithically integrated with a laser diode by compositional disordering of a quantum well
Author :
Hirata, T. ; Suehiro, M. ; Hihara, M. ; Dobashi, M. ; Hosomatsu, H.
Author_Institution :
Yokogawa Electr. Corp., Tokyo, Japan
fDate :
6/1/1993 12:00:00 AM
Abstract :
An elliptic waveguide lens that is monolithically integrated with a GaAs/AlGaAs distributed feedback laser diode and a grating output coupler by electron beam lithography, ion implantation, and two-step metalorganic vapor phase epitaxy is described. The waveguide lens is formed by the etching of a patterning layer to ensure that the fabrication process of the waveguide lens is compatible with that of the laser diode. Collimated output light is directly obtained from a semiconductor substrate using this waveguide lens and a grating output coupler.<>
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium arsenide; integrated optics; lenses; optical couplers; optical waveguides; semiconductor lasers; DFB semiconductor laser; GaAs-AlGaAs; VPE semiconductor growth; collimated output light; compositional disordering; distributed feedback laser; electron beam lithography; etching; fabrication process; grating output coupler; ion implantation; laser diode; monolithically integrated; patterning layer; quantum well; semiconductor substrate; two-step metalorganic vapor phase epitaxy; waveguide lens; Diode lasers; Distributed feedback devices; Electron beams; Gallium arsenide; Gratings; Ion implantation; Lenses; Lithography; Optical coupling; Semiconductor waveguides;
Journal_Title :
Photonics Technology Letters, IEEE
