Title :
200-GHz 50-mW CW Oscillation with Silicon SDR IMPATT (Short Papers)
Author :
Ishibashi, T. ; Ohmori, M.
fDate :
11/1/1976 12:00:00 AM
Abstract :
Silicoin SDR IMPATT diodes have been operated continuously in 200- and 300-GHz bands. A p+-n junction structure was formed by thermal diffusion of boron and ion implantation of phosphorus ions. CW output power of 50 mW was obtained at 202 GHz with 1.3-percent conversion efficiency. At 301-GHz CW output power of 1.2 MW was observed.
Keywords :
Boron; Charge carrier density; Diodes; Ion implantation; Ionization; Microwave devices; Power generation; Rough surfaces; Silicon; Surface roughness;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1976.1128974
