DocumentCode
914167
Title
High-Efficiency Frequency Multiplication with GaAs Avalanche Diodes (Short Papers)
Author
Kramer, B.M. ; Derycke, A.C. ; Farrayre, A. ; Masse, C.F.
Volume
24
Issue
11
fYear
1976
fDate
11/1/1976 12:00:00 AM
Firstpage
861
Lastpage
863
Abstract
GaAs avalanche diodes for frequency multiplication at millimeter wavelengths have been investigated. The GaAs diode design is described and compared with that of Si diodes. Experimental results obtained in the optimum circuit are presented. Frequency multiplication from 4 to 32 GHz with 6-dB conversion loss (400 to 100 mW) and 1.5-W dc bias power was achieved. A temperature dependence of the output power was measured to be less than 1 dB over the -40 to +60°C range.
Keywords
Diodes; Flanges; Frequency conversion; Gallium arsenide; Local oscillators; Loss measurement; Microwave radiometry; Microwave theory and techniques; Mixers; Temperature;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1976.1128976
Filename
1128976
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