DocumentCode :
914196
Title :
A nonsaturating velocity-field approximation for improved invariant domain analysis of Gunn effect devices
Author :
Bohn, P.P.
Volume :
58
Issue :
9
fYear :
1970
Firstpage :
1397
Lastpage :
1398
Abstract :
Experimentally, the excess domain potential of GaAs Gunn effect devices as a function of outside electric field does not exhibit as sharp a "knee" as predicted by the theoretical curves, based upon various approximations. A new approximation, based upon a nonsaturating velocity-field characteristic, predicts a softer "knee" when used in the invariant domain analysis and is closer to experimental results. The basis for this approximation, its use in invariant domain calculations, and experimental verification are described.
Keywords :
Analysis of variance; Circuits; Educational institutions; Electromagnetic scattering; Electron mobility; Gallium arsenide; Gunn devices; Knee; Testing; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1970.7958
Filename :
1449888
Link To Document :
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