The effects of base dopant diffusion on DC and RF characteristics of InGaAs/InAlAs heterojunction bipolar transistors

Author

Hafizi, Madjid ; Metzger, Robert A. ; Stanchina, William E. ; Rensch, David B. ; Jensen, Joseph F. ; Hooper, William W.

Author_Institution

Hughes Res. Lab., Malibu, CA, USA

Volume

13

Issue

3

fYear

1992

fDate

3/1/1992 12:00:00 AM

Firstpage

140

Lastpage

142

Abstract

The effects of base p-dopant diffusion at junction interfaces of InGaAs/InAlAs HBTs with thin base thicknesses and high base dopings are reported. It is shown that HBTs with compositionally graded emitter-based (E-B) junctions are very tolerant to base dopant outdiffusion into the E-B graded region. The RF performance is nearly unaffected by the diffusion, and the DC current gain and E-B junction breakdown voltages are improved with finite Be diffusion into the E-B graded region.<>

Keywords

III-V semiconductors; aluminium compounds; diffusion in solids; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device testing; solid-state microwave devices; DC current gain; HBTs; InGaAs-InAlAs; RF characteristics; base dopant diffusion; breakdown voltages; collector current; compositionally graded emitter base junctions; finite Be diffusion; heterojunction bipolar transistors; high base dopings; thin base thicknesses; Bismuth; Doping; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; P-n junctions; Photonic band gap; Radio frequency;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.144990

Filename

144990