MONTE: A Program to Simulate the Heterojunction Devices in Two Dimensions

This paper describes the two-dimensional heterojunction device simulator MONTE. Drift-diffusion forms the basis for the transport of electrons and holes. Finite differences and Gummel´s algorithm have been adopted to solve the coupled equations. Internal electrodes, capping dielectrics, recessed gates, Fermi-level pinning at the device surface, and deep traps in the substrate can all be treated. A heuristic approach has been devised for evaluating the mobility of electrons based on the quasi-Fermi level. Artifacts such as carrier heating in the built-in field are eliminated, but the model does underestimate electron mobility wherever overshoot occurs. Examples of simulation results on Fermi-level pinning, heterojunction Schottky diodes, a recessed gate MODFET, and a GaAs gate heterojunction FET will be presented.