Ideal GaP surface-barrier diodes

The properties of GaP diodes with metal¿semiconductor (m.s.) potential barriers are described. The structure was manufactured by the chemical deposition of metal (gold or metal) on the n GaP surface. The properties of these m.s. structures (forward current/voltage and photocurrent/photon-energy characteristics and typical parameters) are extremely close to an ideal theoretical model. Comparison of properties of the m.s. structures with properties of the best GaP structure made by vacuum evaporation shows that the method of chemical deposition which is more simple permitted she manufacture of more perfect m.s. structures.