DocumentCode
914433
Title
Design, Fabrication, and Evaluation of BARITT Devices for Doppler System Applications
Author
East, Jack R. ; Nguyen-Ba, Hien ; Haddad, George I.
Volume
24
Issue
12
fYear
1976
fDate
12/1/1976 12:00:00 AM
Firstpage
943
Lastpage
948
Abstract
The properties of BARITT devices and their application in self-mixing Doppler systems are presented. A detailed comparison with IMPATT and Gunn devices indicates that the BARITT is superior in this particular application in many respects, particularly when prime power requirements are important. It is shown that, even though the BARITT device will not compete with existing devices with regard to power output and efficiency, it is the best available device for self-mixed Doppler RADAR applications and therefore should find wide usage in such applications. Simplified design criteria for BARITT devices are given and fabrication procedures for X-band devices with different operating voltages are described.
Keywords
Doppler radar; Electrons; Fabrication; Gallium arsenide; Gunn devices; MESFETs; Microwave FETs; Microwave integrated circuits; Solid state circuits; Voltage;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1976.1129004
Filename
1129004
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