• DocumentCode
    914433
  • Title

    Design, Fabrication, and Evaluation of BARITT Devices for Doppler System Applications

  • Author

    East, Jack R. ; Nguyen-Ba, Hien ; Haddad, George I.

  • Volume
    24
  • Issue
    12
  • fYear
    1976
  • fDate
    12/1/1976 12:00:00 AM
  • Firstpage
    943
  • Lastpage
    948
  • Abstract
    The properties of BARITT devices and their application in self-mixing Doppler systems are presented. A detailed comparison with IMPATT and Gunn devices indicates that the BARITT is superior in this particular application in many respects, particularly when prime power requirements are important. It is shown that, even though the BARITT device will not compete with existing devices with regard to power output and efficiency, it is the best available device for self-mixed Doppler RADAR applications and therefore should find wide usage in such applications. Simplified design criteria for BARITT devices are given and fabrication procedures for X-band devices with different operating voltages are described.
  • Keywords
    Doppler radar; Electrons; Fabrication; Gallium arsenide; Gunn devices; MESFETs; Microwave FETs; Microwave integrated circuits; Solid state circuits; Voltage;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.1976.1129004
  • Filename
    1129004