Title :
Saturation characteristics of n-p-n dual-output current mirror
Author_Institution :
North East London Polytechnic, School of Electrical and Electronic Engineering, Dagenham, UK
fDate :
8/1/1980 12:00:00 AM
Abstract :
If one output transistor of a dual-output monolithic n-p-n current mirror saturates, then the current in the other (nonsaturated) output is significantly reduced. A simple theoretical expression characterising this phenomenon for low-level injection conditions is presented, and techniques for testing its validity outlined.
Keywords :
bipolar integrated circuits; network analysis; low level injection conditions; n-p-n dual output current mirror; saturation characteristics; theoretical expression;
Journal_Title :
Electronic Circuits and Systems, IEE Proceedings G
DOI :
10.1049/ip-g-1:19800030
