650-AA self-aligned-gate pseudomorphic Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.2/In/sub 0.8/As high electron mobility transistors

Author

Nguyen, Loi D. ; Brown, April S. ; Thompson, Mark A. ; Jelloian, Linda M. ; Larson, Larry E. ; Matloubian, Mehran

Author_Institution

Hughes Res. Lab., Malibu, CA, USA

Volume

13

Issue

3

fYear

1992

fDate

3/1/1992 12:00:00 AM

Firstpage

143

Lastpage

145

Abstract

The authors report on the design and fabrication of a 650-AA self-aligned-gate pseudomorphic Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.2/In/sub 0.8/As high electron mobility transistor (HEMT) with a state-of-the-art current gain cutoff frequency of over 300 GHz. This work clearly demonstrates the potential of sub-0.1- mu m gate-length HEMTs for near-future microwave and millimeter-wave applications.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.1 micron; 300 GHz; Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.2/In/sub 0.8/As; current gain cutoff frequency; gate-length; high electron mobility transistors; microwave applications; millimeter-wave applications; self-aligned-gate pseudomorphic HEMT; Cutoff frequency; Electron mobility; Fabrication; Gold; HEMTs; Indium phosphide; MODFETs; Microwave FETs; Parasitic capacitance; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.144991

Filename

144991