Title :
650-AA self-aligned-gate pseudomorphic Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.2/In/sub 0.8/As high electron mobility transistors
Author :
Nguyen, Loi D. ; Brown, April S. ; Thompson, Mark A. ; Jelloian, Linda M. ; Larson, Larry E. ; Matloubian, Mehran
Author_Institution :
Hughes Res. Lab., Malibu, CA, USA
fDate :
3/1/1992 12:00:00 AM
Abstract :
The authors report on the design and fabrication of a 650-AA self-aligned-gate pseudomorphic Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.2/In/sub 0.8/As high electron mobility transistor (HEMT) with a state-of-the-art current gain cutoff frequency of over 300 GHz. This work clearly demonstrates the potential of sub-0.1- mu m gate-length HEMTs for near-future microwave and millimeter-wave applications.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.1 micron; 300 GHz; Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.2/In/sub 0.8/As; current gain cutoff frequency; gate-length; high electron mobility transistors; microwave applications; millimeter-wave applications; self-aligned-gate pseudomorphic HEMT; Cutoff frequency; Electron mobility; Fabrication; Gold; HEMTs; Indium phosphide; MODFETs; Microwave FETs; Parasitic capacitance; Substrates;
Journal_Title :
Electron Device Letters, IEEE
