Title :
A Quasi-Linear Approach to the Design of Microwave Transistor Power Amplifiers (Short Papers)
fDate :
12/1/1976 12:00:00 AM
Abstract :
A method of large-signal transistor characterization and power amplifier design is described which allows the designer to predict the load and source terminations required for optimum added-power circuit efficiency, and to see graphically how efficiency and power gain change as a function of the load termination. Experimental results obtained with a 1-W bipolar junction transistor (BJT) amplifier at 1.3 GHz are presented.
Keywords :
Circuit noise; Gallium arsenide; MESFETs; Microwave FETs; Microwave amplifiers; Microwave theory and techniques; Microwave transistors; National electric code; Power amplifiers; Radiofrequency identification;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1976.1129010
