Low cost X-band power amplifier MMIC

Author

Bösch, Wolfana ; Mayock, James G E ; O´Keefe, Matthew F. ; McMonagle, Jason

Author_Institution

Filtronic plc, West Yorkshire, UK

Volume

21

Issue

3

fYear

2006

fDate

3/1/2006 12:00:00 AM

Firstpage

21

Lastpage

25

Abstract

A family of X-band MMIC power amplifiers using a low cost GaAs pHEMT process is reported. The stepper-based volume 0.5 micron and 0.25 micron GaAs pHEMT processes utilize 4 inter-level metallisation and four dielectric layers for high frequency performance whilst maintaining the economies of scale of 150mm (6") diameter substrates. The fabricated GaAs X-Band PA MMICs exhibit SW to low NY output power under pulsed conditions; 16dB of power gain and power added efficiencies approaching 40%. Excellent repeatability and high yields over a number of wafers have been demonstrated. The design and GaAs process approach taken here with DUV stepper and 150 mm wafer diameter will lead to a significant cost reduction for high performance power amplifier MMICs up to 30GHz.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; dielectric materials; gallium arsenide; integrated circuit metallisation; 0.25 micron; 0.5 micron; 150 mm; 16 dB; 30 GHz; 6 in; DUV stepper; GaAs; GaAs pHEMT process; X-band power amplifier MMIC; dielectric layers; inter-level metallisation; Costs; Dielectric substrates; Economies of scale; Frequency; Gallium arsenide; MMICs; Metallization; PHEMTs; Power generation; Process design;

fLanguage

English

Journal_Title

Aerospace and Electronic Systems Magazine, IEEE

Publisher

ieee

ISSN

0885-8985

Type

jour

DOI

10.1109/MAES.2006.1624187

Filename

1624187