DocumentCode
914550
Title
Measurements on the velocity/field characteristic of indium phosphide
Author
Boers, P.M
Author_Institution
Philips Research Laboratories, NV Philips´ Gloeilampenfabrieken, Eindhoven, Netherlands
Volume
7
Issue
20
fYear
1971
Firstpage
625
Lastpage
626
Abstract
The velocity/field characteristic of InP has been found for fields between 14 and 32 kV/cm from space-charge-wave amplification, and between 32 and 200 kV/cm from measurements on dipole domains. The threshold field (12¿13 kV/cm) and the maximum negative differential mobility (1000 cm2/Vs) are compared with theory.
Keywords
electrical conductivity of solids; electron mobility; indium compounds; semiconductor materials; GaAs space charge wave amplifiers; InP; dipole domains; electron mobility; electron velocity/field characteristic; negative differential mobility; semiconductor materials;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19710422
Filename
4235324
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