Title :
Measurements on the velocity/field characteristic of indium phosphide
Author_Institution :
Philips Research Laboratories, NV Philips´ Gloeilampenfabrieken, Eindhoven, Netherlands
Abstract :
The velocity/field characteristic of InP has been found for fields between 14 and 32 kV/cm from space-charge-wave amplification, and between 32 and 200 kV/cm from measurements on dipole domains. The threshold field (12¿13 kV/cm) and the maximum negative differential mobility (1000 cm2/Vs) are compared with theory.
Keywords :
electrical conductivity of solids; electron mobility; indium compounds; semiconductor materials; GaAs space charge wave amplifiers; InP; dipole domains; electron mobility; electron velocity/field characteristic; negative differential mobility; semiconductor materials;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710422
