Title :
Consideration of velocity saturation in the design of GaAs varactor diodes
Author :
Crowe, Thomas W. ; Peatman, William C B ; Zimmermann, Rüdiger ; Zimmermann, Ralph
Author_Institution :
Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA
fDate :
6/1/1993 12:00:00 AM
Abstract :
The design of GaAs Schottky barrier varactor diodes is reconsidered in light of the recent discovery of velocity saturation effects in these devices. The experimental data are presented confirm that improved multiplier performance can be achieved.<>
Keywords :
III-V semiconductors; Schottky-barrier diodes; gallium arsenide; solid-state microwave devices; varactors; GaAs; Schottky barrier; multiplier performance; varactor diodes; velocity saturation; Anodes; Capacitance; Doping; Epitaxial layers; Frequency; Gallium arsenide; Schottky diodes; Semiconductor diodes; Varactors; Voltage;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
