• DocumentCode
    914555
  • Title

    Consideration of velocity saturation in the design of GaAs varactor diodes

  • Author

    Crowe, Thomas W. ; Peatman, William C B ; Zimmermann, Rüdiger ; Zimmermann, Ralph

  • Author_Institution
    Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA
  • Volume
    3
  • Issue
    6
  • fYear
    1993
  • fDate
    6/1/1993 12:00:00 AM
  • Firstpage
    161
  • Lastpage
    163
  • Abstract
    The design of GaAs Schottky barrier varactor diodes is reconsidered in light of the recent discovery of velocity saturation effects in these devices. The experimental data are presented confirm that improved multiplier performance can be achieved.<>
  • Keywords
    III-V semiconductors; Schottky-barrier diodes; gallium arsenide; solid-state microwave devices; varactors; GaAs; Schottky barrier; multiplier performance; varactor diodes; velocity saturation; Anodes; Capacitance; Doping; Epitaxial layers; Frequency; Gallium arsenide; Schottky diodes; Semiconductor diodes; Varactors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Microwave and Guided Wave Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1051-8207
  • Type

    jour

  • DOI
    10.1109/75.219801
  • Filename
    219801
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=914555