Title :
A GaAs memory device utilizing a buried JFET channel for nondestructive charge sensing
Author :
Hetherington, D.L. ; Klem, John F. ; Weaver, Harry T.
Author_Institution :
Arizona Univ., Tucson, AZ, USA
fDate :
3/1/1992 12:00:00 AM
Abstract :
A new GaAs memory cell consists of a monolithic element in which a P-i-N-i-P epitaxial structure stores charge and a buried p-channel FET senses charge. Measured storage times up to 40 s were observed at 300 K with minimal effects on charge decay for applied drain voltages of V/sub DS/=+or-1.5 V. Electrical write and erase techniques are demonstrated and discussed.<>
Keywords :
III-V semiconductors; gallium arsenide; integrated memory circuits; monolithic integrated circuits; 300 K; 40 s; GaAs memory device; P-i-N-i-P epitaxial structure; bipolar/FET memory cell structure; buried JFET channel; buried p-channel FET; charge decay; charge storage device; drain current response; electrical write techniques; erase techniques; monolithic element; nondestructive charge sensing; storage times; Capacitors; Educational institutions; Etching; FETs; Fabrication; Gallium arsenide; Gold; Heterojunctions; Nonvolatile memory; P-n junctions;
Journal_Title :
Electron Device Letters, IEEE
