Ka- and W-band PM-HFET DROs

Author

Wenger, J. ; Guttich, U.

Author_Institution

Daimler-Benz AG, Ulm, Germany

Volume

3

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

191

Lastpage

193

Abstract

Dielectric resonator stabilized oscillators have been designed, fabricated, and investigated. The oscillators consist of microstrip matching and biasing circuits on alumina substrate, a dielectric resonator puck, and a low-noise quarter-micron InGaAs-GaAs pseudomorphic (PM) HFET as the active device. At 37 GHz and 81 GHz, output powers of 10 dBm and 0 dBm have been measured. The phase noise of the Ka-band and W-band oscillators has been determined to be -97 dBc/Hz at 100 kHz and -90 dBc/Hz at 1 MHz off carrier, respectively.<>

Keywords

III-V semiconductors; dielectric resonators; frequency stability; gallium arsenide; high electron mobility transistors; hybrid integrated circuits; indium compounds; microstrip components; microwave integrated circuits; microwave oscillators; 37 GHz; 81 GHz; Al/sub 2/O/sub 3/; DRO; EHF; InGaAs-GaAs; Ka-band; MM-wave type; W-band; alumina substrate; biasing circuits; dielectric resonator puck; dielectric resonator stabilised oscillator; low-noise; microstrip matching; Circuits; Dielectric devices; Dielectric measurements; Dielectric substrates; HEMTs; MODFETs; Microstrip resonators; Oscillators; Phase noise; Power generation;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.219811

Filename

219811