Title :
Computer Simulation of Impurity Diffusion in Semiconductors by the Monte Carlo Method
Author :
Akiyama, Akira ; Hosoi, Takashi ; Ishihara, Ichiro ; Matsumoto, Satoru ; Niimi, Tatsuya
Author_Institution :
IBM Japan, Yamato Laboratory, Japan
fDate :
3/1/1987 12:00:00 AM
Abstract :
A methodology of impurity diffusion in semiconductors by the Monte Carlo method has been presented. The simulation is carried out by repeating the motion of both vacancies and self-interstitials with the complementary weighting factor for the jumps of respective point defects. This method is applied to impurity diffusion from a limited source in a virtual semiconductor crystal and its validity is confirmed.
Keywords :
Annealing; Computational modeling; Computer simulation; Conductors; Crystalline materials; Equations; Helium; Lattices; Semiconductor impurities; Semiconductor materials;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
DOI :
10.1109/TCAD.1987.1270262
