DocumentCode :
914771
Title :
Symmetry Experiments with Four-Mesa IMPATT Diodes (Letters)
Author :
Rucker, C.T. ; Cox, N.W. ; Amoss, J.W.
Volume :
25
Issue :
1
fYear :
1977
fDate :
1/1/1977 12:00:00 AM
Firstpage :
75
Lastpage :
76
Abstract :
Experiments with four-mesa silicon p+-n-n+ IMPATT diodes have shown power saturation and reduced efficiency when connected and packaged in electrically asymmetrical configurations. The need for electrical symmetry is illustrated by experiments wherein seemingly trivial asymmetries caused severe saturation of the power output.
Keywords :
Contacts; Coupling circuits; Current density; Dielectric thin films; Diodes; Electromagnetic heating; Impedance; Microstrip; Microwave theory and techniques; Wire;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1977.1129038
Filename :
1129038
Link To Document :
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