Reply to `Comments on `Linearization Techniques for Nth-Order Sensor Models in MOS VLSI technology´´

Author

Ismail, Mahamod

Author_Institution

Dept. of Electr. Eng., Ohio State Univ., Columbus, OH

Volume

40

Issue

2

fYear

1993

fDate

2/1/1993 12:00:00 AM

Firstpage

121

Lastpage

122

Abstract

For the original article see IEEE Trans. Circuits Syst., vol.38, no.12, p.1439-50 (1991). The author notes that the double-MOSFET method that was discussed in the above comment by Z. Czarnul (ibid., vol.39, no.9, p.677, 1992) is a design methodology relating the four-transistor circuit to a pair of voltage-controlled floating resistors and as such provides a systematic way to convert active-RC prototypes to MOSFET-C counterparts. Furthermore, it establishes necessary topological conditions that must exist in the active-RC prototype for a successful conversion. The author takes issue with the impression given by the commenter that he did not give proper credit to the latter´s work

Keywords

MOS integrated circuits; VLSI; integrated circuit technology; linearisation techniques; MOS VLSI technology; MOSFET-C counterparts; Nth-Order Sensor Models; active-RC prototypes; design methodology; double-MOSFET method; four-transistor circuit; topological conditions; voltage-controlled floating resistors; Choppers; Circuit topology; Linearization techniques; MOSFETs; Operational amplifiers; Prototypes; Transconductance; Transconductors; Very large scale integration; Voltage;

fLanguage

English

Journal_Title

Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on

Publisher

ieee

ISSN

1057-7130

Type

jour

DOI

10.1109/82.219844

Filename

219844