Reply to `Comments on `Linearization Techniques for Nth-Order Sensor Models in MOS VLSI technology´´

For the original article see IEEE Trans. Circuits Syst., vol.38, no.12, p.1439-50 (1991). The author notes that the double-MOSFET method that was discussed in the above comment by Z. Czarnul (ibid., vol.39, no.9, p.677, 1992) is a design methodology relating the four-transistor circuit to a pair of voltage-controlled floating resistors and as such provides a systematic way to convert active-RC prototypes to MOSFET-C counterparts. Furthermore, it establishes necessary topological conditions that must exist in the active-RC prototype for a successful conversion. The author takes issue with the impression given by the commenter that he did not give proper credit to the latter´s work