• DocumentCode
    914850
  • Title

    Dual-gate gallium-arsenide microwave field-effect transistor

  • Author

    Turner, J.A. ; Waller, A.J. ; Kelly, E. ; Parker, Dennis

  • Author_Institution
    Plessey Co., Allen Clarke Research Centre, Towcester, UK
  • Volume
    7
  • Issue
    22
  • fYear
    1971
  • Firstpage
    661
  • Lastpage
    662
  • Abstract
    Dual-gate gallium-arsenide field-effect transistors have been fabricated which give power gains greater than those which can be obtained from single-gate devices of similar gate length. Unconditionally stable gains in excess of 12 dB at 5 GHz have been measured for these devices.
  • Keywords
    field effect transistors; microwave devices; semiconductor materials; GaAs; dual gate FET; microwave devices; semiconductors; transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19710451
  • Filename
    4235355
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=914850