The stoichiometry of thermal oxidation

Author

Stadler, Andreas

Volume

13

Issue

2

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

394

Lastpage

399

Abstract

At a stoichiometrical relation of silicon and oxygen during the growth of a rapid thermal silicon-oxide layer (RTO) the electrical parameters of the corresponding metal-insulator-semiconductor capacitor show significant behavior. Combining the Henry-Dalton law and the Boyle-Mariotte law with the Deal-Grove model allows an estimation of the fundamental (T, t, C) process, parameters, temperature, time and concentration of the reactive gas for a stoichiometrical processing of ultra thin SiO/sub 2/ films. Electrical measurements show the (T, t, C)-dependency of I-V, time dependent dielectric breakdown (TDDB) and C-V measurements especially of direct tunneling currents j/sub DT/, relative difference of tunneling currents /spl Delta//sub RDT/, charge-to-breakdown Q/sub BD/ and interface state density D/sub it/.

Keywords

MIS capacitors; oxidation; parameter estimation; rapid thermal processing; semiconductor device breakdown; semiconductor device measurement; semiconductor thin films; silicon compounds; stoichiometry; tunnelling; Boyle-Mariotte law; C-V measurement; Deal-Grove model; Henry-Dalton law; I-V measurement; SiO/sub 2/; charge-to-breakdown; interface state density; metal-insulator-semiconductor capacitor; parameter estimation; rapid thermal oxidation; stoichiometry; time dependent dielectric breakdown measurement; tunneling; ultra thin silicon-oxide film;

fLanguage

English

Journal_Title

Dielectrics and Electrical Insulation, IEEE Transactions on

Publisher

ieee

ISSN

1070-9878

Type

jour

DOI

10.1109/TDEI.2006.1624284

Filename

1624284