DocumentCode
915069
Title
New method to determine the base resistance of bipolar transistors
Author
Weng, J. ; Holz, J. ; Meister, T.F.
Author_Institution
Siemens AG, Munich, Germany
Volume
13
Issue
3
fYear
1992
fDate
3/1/1992 12:00:00 AM
Firstpage
158
Lastpage
160
Abstract
A new method to determine the base resistance of bipolar transistors under forward-bias conditions is presented. Using special transistor structures, the total base resistance has been directly measured and then separated into its components, the external and internal base resistances. The sheet resistance for the internal base region can be estimated for a base-emitter voltage range of practical interest. An accurate estimation of the base resistance of advanced bipolar transistors under high-forward-bias conditions is demonstrated.<>
Keywords
bipolar transistors; electric resistance measurement; semiconductor device testing; base resistance; base-emitter voltage range; bipolar transistors; external base resistance; forward-bias conditions; internal base resistances; sheet resistance; Bipolar transistor circuits; Bipolar transistors; Contact resistance; Current measurement; Design optimization; Economic indicators; Electrical resistance measurement; Noise measurement; Testing; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.144996
Filename
144996
Link To Document