DocumentCode
915109
Title
Bulk lifetime determination using an MOS capacitor
Author
Huang, J.S.T.
Volume
58
Issue
11
fYear
1970
Firstpage
1849
Lastpage
1850
Abstract
A simple method is described for the determination of minority carrier lifetime from the large-signal response time of an MOS capacitor in deep inversion. The method consists of monitoring the change of MOS capacitance as a function of time. A graph is presented to expedite easy extraction of lifetime from the transient waveform.
Keywords
Capacitance; Charge carrier lifetime; Electrons; MOS capacitors; Monitoring; Plasma devices; Steady-state; Surface charging; Switches; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1970.8033
Filename
1449963
Link To Document