Dynamic I-V characteristics of an AlGaAs/GaAs-based optothyristor for pulsed power-switching applications

Author

Zhao, Jian H. ; Burke, Terry ; Larson, Dana ; Weiner, Maurice ; Chin, Albert ; Ballingall, James M. ; Yu, Tan-hua

Author_Institution

Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA

Volume

13

Issue

3

fYear

1992

fDate

3/1/1992 12:00:00 AM

Firstpage

161

Lastpage

163

Abstract

A high-performance MBE-grown AlGaAs/GaAs-based heterostructure optothyristor has been fabricated and characterized for high-power pulsed switching applications. An LEC undoped semi-insulating GaAs of 650 mu m in thickness was used as the voltage blocking layer and low-temperature GaAs grown at 200 degrees C was used to passivate the surface and to reduce the surface leakage current. The dynamic current-voltage characteristics have been measured up to 115 A and 1974 V, which corresponds to a field intensity of more than 30 kV/cm. The dissipated energy per switching as a function of device voltage has also been determined to be in the range of 2 mJ or lower.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; photoconducting devices; pulsed power technology; thyristor applications; thyristors; 115 A; 1974 V; AlGaAs-GaAs; GaAs; MBE growth; dissipated energy per switching; dynamic I-V characteristics; heterostructure optothyristor; pulsed power-switching applications; surface leakage current; surface passivation; voltage blocking layer; Gallium arsenide; Laboratories; Optical materials; Optical sensors; Photonic band gap; Photothyristors; Pulsed power supplies; Switches; Thyristors; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.144997

Filename

144997