Silicon etch-refill p+-p-n+ epitaxial X-band IMPATT device

Author

Mark, Andrew ; Harmatz, M.

Volume

Issue

fYear

1970

Firstpage

1867

Lastpage

1868

Abstract

Selectively deposited silicon double epitaxial p+-p-n+ diodes of an IMPATT design have been used to generate the X-band microwave power.

Keywords

Bonding; Capacitance; Current measurement; Diodes; Etching; Fabrication; Leakage current; Silicon; Thermal resistance; Voltage;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

DOI

10.1109/PROC.1970.8048

Filename

1449978

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