High-transconductance InAs/AlSb heterojunction field-effect transistors with delta -doped AlSb upper barriers

Author

Werking, James D. ; Bolognesi, Colombo R. ; Chang, Lit-Deh ; Nguyen, Chanh ; Hu, Evelyn L. ; Kroemer, Herbert

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

13

Issue

3

fYear

1992

fDate

3/1/1992 12:00:00 AM

Firstpage

164

Lastpage

166

Abstract

The authors report the fabrication and temperature-dependent characterization of InAs/AlSb quantum-well heterojunction field-effect transistors (HFETs). Devices with electron sheet concentrations of 3.8*10/sup 12/ cm/sup -2/ and low-field electron mobilities of 21000 cm/sup 2//V-s have been realized through the use of Te delta -doping sheets in the upper AlSb barrier. One device with a 2.0- mu m gate length showed a peak extrinsic transconductance of 473 mS/mm at room temperature. Gate leakage current, operating current density, and extrinsic transconductance were found to decrease with decreasing temperature.<>

Keywords

III-V semiconductors; aluminium compounds; carrier mobility; field effect transistors; indium compounds; leakage currents; semiconductor quantum wells; 473 mS; AlSb:Te; InAs-AlSb; delta -doped AlSb upper barriers; electron sheet concentrations; extrinsic transconductance; gate leakage current; low-field electron mobilities; operating current density; quantum-well heterojunction field-effect transistors; temperature-dependent characterization; Electron mobility; FETs; Fabrication; HEMTs; Heterojunctions; MODFETs; Quantum well devices; Tellurium; Temperature; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.144998

Filename

144998