Title :
Sidegating effect of GaAs MESFETs in carbon doped GaAs substrate
Author :
Fujimoto, Kenji ; Tamura, A.
Author_Institution :
Matsushita Electric Industrial Co. Ltd., Osaka, Japan
fDate :
6/10/1993 12:00:00 AM
Abstract :
The sidegating effect of GaAs MESFETs in carbon doped semi-insulating GaAs substrate was investigated. Measurement results suggest that both the hole injection at one part of the gate electrode, and the modulation of the width of the depletion layer near the interface between the channel and substrate, cause the sidegating effect of GaAs MESFETs. Also, with the increase of carbon concentration, the latter cause becomes dominant in the sidegating effect.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; carbon; gallium arsenide; semiconductor doping; C concentrations; GaAs-GaAs:C; GaAs:C substrate; MESFETs; O doped substrate; depletion layer width modulation; gate electrode; hole injection; sidegating effect;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930721
