• DocumentCode
    915429
  • Title

    Recovery of submicrometer pMOSFETs from hot carrier degradation by high field injection

  • Author

    Zhang, Jian F. ; Taylor, Stephen ; Eccleston, W. ; Barlow, K.

  • Author_Institution
    Liverpool John Moores Univ., UK
  • Volume
    29
  • Issue
    12
  • fYear
    1993
  • fDate
    6/10/1993 12:00:00 AM
  • Firstpage
    1097
  • Lastpage
    1099
  • Abstract
    Charge carrier tunnelling into gate oxide under high field strength (e.g. 8 MV/cm) is found to be an efficient method for the recovery of hot electron induced pMOSFET degradation, including hot electron induced punchthrough effects. The physical processes responsible for the recovery are investigated.
  • Keywords
    high field effects; hot carriers; insulated gate field effect transistors; life testing; semiconductor device testing; tunnelling; charge carrier tunnelling; gate oxide; high field injection; high field strength; hot carrier degradation; hot electron induced pMOSFET degradation; lifetime; physical processes; punchthrough effects; recovery; submicrometre pMOSFET;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930732
  • Filename
    220828
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=915429