Title :
Recovery of submicrometer pMOSFETs from hot carrier degradation by high field injection
Author :
Zhang, Jian F. ; Taylor, Stephen ; Eccleston, W. ; Barlow, K.
Author_Institution :
Liverpool John Moores Univ., UK
fDate :
6/10/1993 12:00:00 AM
Abstract :
Charge carrier tunnelling into gate oxide under high field strength (e.g. 8 MV/cm) is found to be an efficient method for the recovery of hot electron induced pMOSFET degradation, including hot electron induced punchthrough effects. The physical processes responsible for the recovery are investigated.
Keywords :
high field effects; hot carriers; insulated gate field effect transistors; life testing; semiconductor device testing; tunnelling; charge carrier tunnelling; gate oxide; high field injection; high field strength; hot carrier degradation; hot electron induced pMOSFET degradation; lifetime; physical processes; punchthrough effects; recovery; submicrometre pMOSFET;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930732
