Stabilising influence of boron in silicon-gate technology

By performing a series of experiments on polysilicon-oxide-silicon (S.O.S.) capacitors, it is shown that, in p channel silicon-gate technology, a gettering action occurs during the drive-in cycle. Although the exact mechanism of this action is not known, it is tentatively suggested that, during the drive-in cycle, boron enters the gate oxide and renders the mobile ions inactive.