• DocumentCode
    915500
  • Title

    Experimental comparison of silicon p+-n-p+ and Cr-n-p+ transit-time oscillators

  • Author

    Snapp, Craig P. ; Weissolas, Peter

  • Author_Institution
    Microwave Institute Foundation, Stockholm, Sweden
  • Volume
    7
  • Issue
    25
  • fYear
    1971
  • Firstpage
    743
  • Lastpage
    744
  • Abstract
    Punchthrough transit-time diodes have been constructed with both Schottky-barrier and diffused-junction emitters. The microwave and d.c. characteristics of these devices are strikingly similar. Either construction technique appears to be suitable for the future development of low-noise microwave sources.
  • Keywords
    microwave oscillators; semiconductor diodes; transit time devices; Cr-n-p+ transit time oscillator; DC characteristics; Schottky barrier emitters; Si p+-n-p+ transit time oscillator; diffused junction emitters; low noise microwave sources; microwave characteristics; microwave oscillators; punchthrough transit time diode; semiconductor diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19710509
  • Filename
    4235416
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=915500