Title :
1.3-1.55 mu m wavelength integrated photoreceiver using GaInAs/GaAs heteroepitaxy
Author :
Ramdani, J. ; Decoster, D. ; Vilcot, J.P. ; Gouy, J.P. ; Razeghi, M.
Author_Institution :
Centre Hyperfrequences et Semicond., Univ. des Sci. et Tech. de Lille-Flandres-Artois, Villeneuve d´´Ascq, France
Abstract :
The authors present a monolithic integrated photoreceiver, suitable for long wavelength (1.3-1.55 mu m) optical communication systems, which associates a planar embedded Ga/sub 0.47/In/sub 0.53/As photoconductor with a GaAs field effect transistor. The Ga/sub 0.47/In/sub 0.53/As epitaxy has been grown in holes previously etched in a GaAs epitaxy in order to increase the dark resistance of the photoconductive detector. Experimental results on the photoconductor and the integrated circuit are reported. As an example, the sensitivity of the integrated photoreceiver has been evaluated close to -28 dBm at 250 Mbits/s NRZ for a 10/sup -9/ bit error rate.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; integrated optoelectronics; optical links; photodetectors; semiconductor epitaxial layers; semiconductor growth; 1.3 to 1.55 micron; 250 Mbit/s; Ga/sub 0.47/In/sub 0.53/As; GaInAs-GaAs; III-V semiconductors; dark resistance; field effect transistor; heteroepitaxy; integrated photoreceiver; monolithic integrated photoreceiver; optical communication systems; photoconductive detector; Gallium compounds; Integrated optoelectronics; Photodetectors; Semiconductor epitaxial layers; Semiconductor growth;
Journal_Title :
Optoelectronics, IEE Proceedings J
