1.3-1.55 mu m wavelength integrated photoreceiver using GaInAs/GaAs heteroepitaxy

Author

Ramdani, J. ; Decoster, D. ; Vilcot, J.P. ; Gouy, J.P. ; Razeghi, M.

Author_Institution

Centre Hyperfrequences et Semicond., Univ. des Sci. et Tech. de Lille-Flandres-Artois, Villeneuve d´´Ascq, France

Volume

136

Issue

1

fYear

1989

Firstpage

83

Lastpage

87

Abstract

The authors present a monolithic integrated photoreceiver, suitable for long wavelength (1.3-1.55 mu m) optical communication systems, which associates a planar embedded Ga/sub 0.47/In/sub 0.53/As photoconductor with a GaAs field effect transistor. The Ga/sub 0.47/In/sub 0.53/As epitaxy has been grown in holes previously etched in a GaAs epitaxy in order to increase the dark resistance of the photoconductive detector. Experimental results on the photoconductor and the integrated circuit are reported. As an example, the sensitivity of the integrated photoreceiver has been evaluated close to -28 dBm at 250 Mbits/s NRZ for a 10/sup -9/ bit error rate.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; integrated optoelectronics; optical links; photodetectors; semiconductor epitaxial layers; semiconductor growth; 1.3 to 1.55 micron; 250 Mbit/s; Ga/sub 0.47/In/sub 0.53/As; GaInAs-GaAs; III-V semiconductors; dark resistance; field effect transistor; heteroepitaxy; integrated photoreceiver; monolithic integrated photoreceiver; optical communication systems; photoconductive detector; Gallium compounds; Integrated optoelectronics; Photodetectors; Semiconductor epitaxial layers; Semiconductor growth;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings J

Publisher

iet

ISSN

0267-3932

Type

jour

Filename

14500