Title :
High gain 70-80 GHz MMIC amplifiers in coplanar waveguide technology
Author :
Schlechtweg, Michael ; Tasker, P.J. ; Reinert, Wolfgang ; Braunstein, J. ; Haydl, W. ; Hulsmann, A. ; Kohler, Klaus
Author_Institution :
Fraunhofer Inst. fur Angewandte Festkorperphys., Freiburg, Germany
fDate :
6/10/1993 12:00:00 AM
Abstract :
Pseudomorphic MODFET three-stage MMIC amplifiers were designed and fabricated which cover the 76-77 GHz band allocated for automotive applications in Europe. The MMICs in coplanar technology have a gain of 27 dB at 70 GHz and 21 dB at 77 GHz. To the authors´ knowledge, this is the highest gain reported for any MMIC amplifier above 40 GHz for both GaAs- and InP-based circuits.
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; indium compounds; microwave amplifiers; 21 dB; 27 dB; 70 to 80 GHz; GaAs substrate; In 0.25Ga 0.75As-GaAs; automotive applications; coplanar waveguide technology; high gain; pseudomorphic MODFET three stage MMIC amplifiers; reflection coefficients; reverse isolation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930746
